si9428dy vishay siliconix document number: 70810 s-03950?rev. c, 26-may-03 www.vishay.com 1 n-channel 2.5-v (g-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) 20 0.03 @ v gs = 4.5 v 6 20 0.04 @ v gs = 2.5 v 5.2 s d d s d d so-8 5 6 7 8 top view 2 3 4 1 n-channel mosfet d 1 d 1 g 1 s 1 s g ordering information: si9428dy si9428dy-t1 (with t ape and reel) absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 20 v gate-source voltage v gs 8 v continuous drain current (t j = 150 c) a, b t a = 25 c i d 6 continuous drain current (t j = 150 c) a, b t a = 70 c i d 4.8 a pulsed drain current i dm 20 a continuous source current (diode conduction) a, b i s 1.7 maximum power dissipation a, b t a = 25 c p d 2.5 w maximum power dissipation a, b t a = 70 c p d 1.6 w operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction to ambient a t 10 sec r 50 c/w maximum junction-to-ambient a steady state r thja 70 c/w notes a. surface mounted on fr4 board. b. t 10 sec.
si9428dy vishay siliconix www.vishay.com 2 document number: 70810 s-03950?rev. c, 26-may-03 mosfet specifications (t j =25 c unless otherwise noted) parameter symbol test condition min typ max unit static-0.6 gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.6 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v, t j = 55 c 5 a on-state drain current a i d(on) v ds 5 v, v gs = 4.5 v 20 a drain source on state resistance a r ds( ) v gs = 4.5 v, i d = 6 a 0.023 0.03 drain-source on-state resistance a r ds(on) v gs = 2.5 v, i d = 5.2 a 0.028 0.04 forward transconductance a g fs v ds = 10 v, i d = 6 a 24 s diode forward voltage a v sd i s = 1.7 a, v gs = 0 v 0.75 1.2 v dynamic b total gate charge q g 21 40 gate-source charge q gs v ds = 10 v, v gs = 4.5 v, i d = 6 a 2.9 nc gate-drain charge q gd 6.5 gate resistance r g 1 3.4 turn-on delay time t d(on) 30 60 rise time t r v dd = 10 v, r l = 10 70 140 turn-off delay time t d(off) v dd = 10 v , r l = 10 i d 1 a, v gen = 4.5 v, r g = 6 70 140 ns fall time t f 30 60 source-drain reverse recovery time t rr i f = 1.7 a, di/dt = 100 a/ s 70 100 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing.
si9428dy vishay siliconix document number: 70810 s-03950?rev. c, 26-may-03 www.vishay.com 3 typical characteristics (25 c unless noted) output characteristics transfer characteristics gate charge on-resistance vs. drain current v ds - drain-to-source voltage (v) - drain current (a) i d v gs - gate-to-source voltage (v) - drain current (a) i d - gate-to-source voltage (v) q g - total gate charge (nc) v ds - drain-to-source voltage (v) c - capacitance (pf) v gs - on-resistance ( r ds(on) ) i d - drain current (a) capacitance on-resistance vs. junction t emperature t j - junction temperature ( c) (normalized) - on-resistance ( r ds(on) ) 0 4 8 12 16 20 012345 0 1 2 3 4 5 0 5 10 15 20 25 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 0 50 100 150 0.00 0.01 0.02 0.03 0.04 0.05 0 5 10 15 20 0 500 1000 1500 2000 2500 3000 024681012 0 5 10 15 20 0.0 0.5 1.0 1.5 2.0 2.5 -55 c v gs = 2.5 v c rss c oss c iss v gs = 4.5 v t c = 125 c v ds = 10 v i d = 6 a v gs = 4.5 v i d = 6 a v gs = 4.5, 4, 3.5, 3, 2.5 v 1.5 v 2 v 1, 0 v 25 c
si9428dy vishay siliconix www.vishay.com 4 document number: 70810 s-03950?rev. c, 26-may-03 typical characteristics (25 c unless noted) source-drain diode forward v oltage on-resistance vs. gate-to-source voltage threshold v oltage single pulse power normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance - on-resistance ( r ds(on) ) v sd - source-to-drain voltage (v) v gs - gate-to-source voltage (v) - source current (a) i s t j - temperature ( c) time (sec) power (w) - 0.8 - 0.6 - 0.4 - 0.2 - 0.0 0.2 0.4 - 50 0 50 100 150 0.00 0.02 0.04 0.06 0.08 0.10 02468 t j = 150 c t j = 25 c 2 1 0.1 0.01 i d = 6 a i d = 250 a 0.2 0.4 10 0.6 0.8 1.0 1.2 1 10 -3 10 -2 1 10 600 10 -1 10 -4 0.01 0 0.1 48 60 12 24 36 11030 duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 20 variance (v) v gs(th) 100 1. duty cycle, d = 2. per unit base = r thja = 70 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm
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